Kyoto’s new KP-H photodiode achieves 40GHz bandwidth and supports 400 Gbps transmission systems, says 5G and Beyond
Japan’s Kyoto Semiconductor Co Ltd has developed the KP-H KPDEH12L-CC1C lens-integrated chip-on-carrier indium gallium arsenide (InGaAs) high-speed photodiode to support 400Gbps transmission systems that use PAM4 (Pulse Amplitude Modulation 4) both within and between data centers.
Kyoto Semiconductor was established in 1980 in Kyoto as a dedicated manufacturer of semiconductors. The semiconductors manufactured offer superlative performance and precision, suited for use in optical transmission. They are manufactured end-to-end, including pre- and post-processing, and together with Kyoto Semiconductor’s unique packaging technology, at our location in Japan and made available to customers around the world.
Currently, Kyoto has achieved transmission speeds of mainly 100Gbps by bundling 4 lanes of 25Gbps. However, there are growing demands in the market for 400-800Gbps transmission speeds. The Institute of Electrical and Electronics Engineers (IEEE) set the PAM4 standard, which corresponds with the 4-bit signal to one modulation. The transmission speed per photodiode reaches 50Gps (= 400Gps/4 lanes/2 (PAM4)). The transmission bandwidth required for the photodiode to achieve this speed is 35-40GHz.
The KP-H photodiode has passed Telcordia GR-468-Core, which is the standard reliability test for communication equipment. Easy implementation – KPDEH12L-CC1C is mounted on a carrier that is optimally designed to achieve high frequency. A condenser lens is integrated on the backside of the photodiode, allowing the incoming light to collect in the light absorption area, and makes it easy to align the optical fiber with PD. The PD chip is mounted on a carrier twice as big as the chip itself.
With the introduction of the new photodiode, Kyoto is supporting the increasing speeds and capacity requirements for transmission systems in 5G networks and beyond. The 0.6mm x 0.48mm x 0.25mm size of the carrier on which the photodiode is mounted, and the width and length of the electrode pattern formed on the surface of the board (with little attenuation at high frequencies), are optimized using electromagnetic simulation.
The photodiode chip is mounted on a carrier twice as big as the chip itself. Mass production of the KP-H KPDEH12L-CC1C photodiode is scheduled to start in November. Here are the functioning and the official announcement done by the company about its new product. For more news on tech and cybersecurity stay tuned at Android Rookies by subscribing to our newsletter from here.